Financial Post
– Three new devices boost efficiency and power density of industrial equipment – KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in surface-mount TOLL packages…
Read More
Toshiba Releases 650V 3rd Generation SiC MOSFETs in TOLL Package
Business Wire
11:20
– Three new devices boost efficiency and power density of industrial equipment – KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in surface-mount TOLL packages…
