PV-Magazine
Fraunhofer ISE researchers say their newly fabricated gallium arsenide substrates (InP-on-GaAs wafers) can replace prime indium phosphide wafers and offer a scalable pathway to lower costs…
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Fraunhofer ISE developing InP-on-GaAs substrates for III-V solar cells
Fraunhofer ISE researchers say their newly fabricated gallium arsenide substrates (InP-on-GaAs wafers) can replace prime indium phosphide wafers and offer a scalable pathway to lower costs…